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micro n sf6 in IRAN

micro n sf6 in IRAN

High-aspect-ratio deep Si etching of micro/nano scale.· PDF fileTehran, Iran, Email: [email protected] ABSTRACT Using three gasese of SF6, O2 and H2, deep vertical etching of silicon substrates in a low plasma density environment is reported. A reactive ion etching (RIE) unit with an operating frequency of 13.56 MHz has been used with plasma power densities below 1 W/cm2. The verticalAuthor: M Mehran, S Mohajerzadeh, M Poudineh, Z Sanaee

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